The influence of the substrate temperature change character during the growth on the topology of the Ge/Si(100) film surface

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Abstract


The possibility of roughness reducing of the Ge/Si (100) film using low-temperature layer of Ge (LT-Ge) has been investigated. It was shown that the substrate temperature change character during the growth process influences on the surface morphology of the grown Ge/LT-Ge/Si films. Samples were obtained by the method of molecular-beam epitaxy.

L S Lunin

Southern Scientific Center

Южный научный центр РАН; Southern Scientific Center

M D Bavizhev

Southern Scientific Center

Южный научный центр РАН; Southern Scientific Center

I A Sysoev

Southern Scientific Center

Южный научный центр РАН; Southern Scientific Center

V A Lapin

Southern Scientific Center

Южный научный центр РАН; Southern Scientific Center

D S Kuleshov

Southern Scientific Center

Южный научный центр РАН; Southern Scientific Center

F F Malyavin

Southern Scientific Center

Южный научный центр РАН; Southern Scientific Center

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Copyright (c) 2012 Лунин Л.С., Бавижев М.Д., Сысоев И.А., Лапин В.А., Кулешов Д.С., Малявин Ф.Ф.

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