Modulated Characteristics of Nanosize p-i-n SOI Units

Optical waveguide devices - modulators and switches are one of the most demanded photon devices on whom further possibility of increase of keyword parameters of integrated optical circuits and telecommunication systems depends. Search of new development approaches of necessary element basis on the basis of combination of planar technology of integrated optics and the thin-film technology “silicon on an insulator” is necessary for increase of their competitiveness. For silicon devices methods of electrooptical modulation are based on effect of dispersion of the free carriers which density depends on the level of applied voltage. In operation the perspectives of application of p-i-n of electrooptical modulators executed on the basis of the “silicon on an insulator” technology are discussed. In comparison with other class of modulators on the basis of lithium niobate, the researched devices potentially have a row of advantages, such as the low level of power consumption (within 1 W), nanosized miniaturization, high throughput (modulation frequency band over 100 GHz). The researched nanophoton devices are hi-tech and expensive. Their simulation at the physical layer is important and as for understanding of the physical processes proceeding in them and for optimization of their parameters for the purpose of achievement of optimum characteristics. On the basis of computer simulation in this operation possibility of optimization of parameters of nanosized electrooptical p-i-n of the waveguide modulators which potentially will allow to realize highly effective optical modulation is researched.

silicon photonic, waveguide optic structure, p-i-n electrooptical modulator, silicon-on-insulator structure